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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION With TO-3PL package Excellent switching times : tr=1.0|I s(Max .),tf=1.0|I s(Max .)(IC=5A) High collector breakdown voltage : VCEO=800V APPLICATIONS High speed,high voltage switching applications Switching regulator applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3PL) and symbol CHA IN Emitter-base voltage Collector current Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 900 800 7 10 15 3 UNIT V V V A A A W ae ae Open emitter Collector-emitter voltage Open collector Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V ;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 10 MIN 800 900 2SC3307 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 |I V V A mA Switching times tr tstg tf Rise time Fall time INC Storage time E SEM ANG H OND IC TOR UC 10 1.0 3.0 1.0 |I |I |I s s s IC=1A ; VCCO 400V IB1=-IB2=0.4A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3307 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3307 CHA IN E SEM NG OND IC TOR UC 4 |
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